fll600iq-2c Eudyna Devices Inc, fll600iq-2c Datasheet

fll600iq-2c

Manufacturer Part Number

fll600iq-2c

Description

L-band High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL600IQ-2C.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FLL600IQ-2C

Manufacturer:

FUJITSU/富士通

Quantity:

20 000

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ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

CASE STYLE: IU

Edition 1.1

October 2004

DESCRIPTION

The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power L-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is uniquely suited for use in W-CDMA and IMT 2000 base

station amplifiers as it offers high gain, long term reliability and ease of use.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

FEATURES

• Push-Pull Configuration

• High Power Output: 60W (Typ.)

• High PAE: 51% (Typ.)

• Broad Frequency Range: 2100 to 2200 MHz.

• Suitable for class AB operation.

APPLICATIONS

• Solid State Base-Station Power Amplifier.

• W-CDMA and IMT 2000 Communication Systems.

Drain Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power

Linear Gain

Drain Current

Power-Added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 10Ω.

Item

Symbol

stg

DSS

DSR

GSO

add

out

f = 2.17 GHz

Pin = 39dBm

Channel to Case

= 1.5A

= -1.51mA

= 5V, V

= 5V, I

= 12V

Tc = 25°C

Condition

Conditions

= 151mA

= 0V

L-Band High Power GaAs FET

Min.

47.0

11.0

-0.1

-65 to +175

-5

FLL600IQ-2C

Rating

+175

125

-5

Limits

Typ.

48.0

12.0

-0.3

0.8

Max.

-0.5

1.2

Unit

°C

°C/W

dBm

Unit

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fll600iq-2c Summary of contents

Page 1

... Broad Frequency Range: 2100 to 2200 MHz. • Suitable for class AB operation. DESCRIPTION The FLL600IQ- Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...

Page 2

... FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER 12V 1.5A - 2.14GHz W-CDMA Single Signal -30 -5MHz +5MHz -35 -10MHz +10MHz -40 -45 -50 -55 -60 - Output Power (dBm) OUTPUT POWER vs. FREQUENCY 12V 1.5A Wide Band Tuned ...

Page 3

... FLL600IQ-2C S22 MAG ANG .853 175.2 .845 174.8 .841 175.0 .835 175.1 .828 175.4 .828 176.0 .833 176.4 .847 176.7 .864 176.6 .887 175.6 .905 173.9 .907 171.2 ...

Page 4

... FLL600IQ-2C L-Band High Power GaAs FET 6 4-R1.3±0.2 (0.051) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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