si4226dy Vishay, si4226dy Datasheet

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si4226dy

Manufacturer Part Number
si4226dy
Description
Dual N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4226DY
Manufacturer:
SANYO
Quantity:
35
Part Number:
si4226dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
25
(V)
Ordering Information:
C
G
G
= 25 °C.
S
S
0.0195 at V
1
1
2
2
0.026 at V
1
2
3
4
R
DS(on)
GS
GS
Top View
Si4226DY-T1-E3 (Lead (Pb)-free)
Si4226DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
J
(Ω)
SO-8
= 2.5 V
= 150 °C)
= 4.5 V
b, d
Dual N-Channel 25-V (D-S) MOSFET
8
7
6
5
I
D
(A)
D
D
D
D
8
8
1
1
2
2
Steady State
a, e
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
(Typ.)
11
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
I
P
, T
DM
I
I
SM
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Synchronous Buck Converter
Available
G
Typical
1
50
30
g
N-Channel MOSFET
and UIS Tested
®
Power MOSFET
D
S
1
1
- 55 to 150
1.28
7.5
1.7
Limit
± 12
6
2
7.7
2.6
3.2
2.1
25
8
30
30
10
b, c
b, c
5
e
b, c
b, c
b, c
Maximum
G
2
62.5
38
Vishay Siliconix
N-Channel MOSFET
Si4226DY
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4226dy Summary of contents

Page 1

... Top View Ordering Information: Si4226DY-T1-E3 (Lead (Pb)-free) Si4226DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current ...

Page 2

... Si4226DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... Gate Charge Document Number: 69980 S09-0392-Rev. B, 09-Mar-09 New Product 1700 1360 1020 680 340 Si4226DY Vishay Siliconix 125 ° ° ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4226DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0 Junction Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0. °C J 0.04 0.02 0.00 0.8 1.0 1 250 µA ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4226DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4226DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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