si4136dy Vishay, si4136dy Datasheet

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si4136dy

Manufacturer Part Number
si4136dy
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4136dy-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
si4136dy-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
1 940
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
20
(V)
C
= 25 °C.
0.0025 at V
G
S
S
S
0.002 at V
R
1
2
3
4
DS(on)
GS
GS
Top View
J
(Ω)
SO-8
= 150 °C)
= 10 V
= 4.5 V
b, d
N-Channel 20-V (D-S) MOSFET
8
7
6
5
I
D
46
41
(A)
D
D
D
D
Steady State
a
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
34 nC
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• OR-ing
• DC/DC
Typical
29
13
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
24.7
3.1
3.5
2.2
Limit
31
± 20
7.8
20
46
37
70
30
45
7
5
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
35
16
Vishay Siliconix
Si4136DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4136dy Summary of contents

Page 1

... Top View Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... Si4136DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 New Product 1.5 2.0 2.5 6000 4800 3600 2400 1200 Si4136DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) ...

Page 4

... Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.015 0.012 0.009 °C J 0.006 0.003 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4136DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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