si4396dy Vishay, si4396dy Datasheet - Page 3

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si4396dy

Manufacturer Part Number
si4396dy
Description
N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 74252
S-61223-Rev. A, 17-Jul-06
0.018
0.016
0.014
0.012
0.010
0.008
10
8
6
4
2
0
50
40
30
20
10
0.0
0
0.0
0
I
D
= 10 A
On-Resistance vs. Drain Current
6.2
0.5
10
V
V
DS
Q
DS
Output Characteristics
g
= 15 V
– Drain-to-Source Voltage (V)
– Total Gate Charge (nC)
I
D
12.4
Gate Charge
– Drain Current (A)
1.0
20
V
GS
= 4.5 V
V
18.6
DS
VGS= 10 thru 4 V
1.5
30
= 10 V
V
DS
= 20 V
V
24.8
GS
3 V
2.0
40
= 10 V
31.0
2.5
50
2200
1760
1320
1.7
1.5
1.3
1.1
0.9
0.7
880
440
2.0
1.6
1.2
0.8
0.4
0.0
- 50
0
0
0
C
On-Resistance vs. Junction Temperature
I
D
rss
- 25
= 10 A
C
V
oss
T
4
V
DS
Transfer Characteristics
J
0
GS
– Junction Temperature (°C)
1
– Drain-to-Source Voltage (V)
T
– Gate-to-Source Voltage (V)
C
T
25
C
Capacitance
= 125 °C
= 25 °C
8
V
GS
50
Vishay Siliconix
2
= 4.5 V
C
iss
12
75
Si4396DY
V
GS
www.vishay.com
100
= 10 V
T
3
C
16
= - 55 °C
125
150
20
4
3

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