bap63-01-n NXP Semiconductors, bap63-01-n Datasheet - Page 4

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bap63-01-n

Manufacturer Part Number
bap63-01-n
Description
Bap63-01 Silicon Pin Diode
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GRAPHICAL DATA
2001 Nov 01
Silicon PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
Diode inserted in series with a 50
via the analyzer Tee network. T
Fig.4
|s
(dB)
( )
r
21
D
0.1
F
F
10
|
-0.1
-0.2
-0.3
-0.4
-0.5
2
1
= 0.5 mA.
= 1 mA.
0.1
0
Forward resistance as a function of forward
current; typical values.
Insertion loss ( s
function of frequency; typical values.
0
j
= 25 C.
(3) I
(4) I
(3)
(1)
1
1
F
F
= 10 mA.
= 100 mA.
(4)
amb
(2)
21
2
stripline circuit and biased
= 25 C.
) of the diode as a
10
2
f (GHz)
I
F
(mA)
100
3
4
(pF)
C
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
|s
(dB)
d
amb
21
|
2
400
300
200
100
= 25 C.
0
-10
-20
-30
-40
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
frequency; typical values.
0
j
= 25 C.
4
21
1
2
8
) of the diode as a function of
12
Preliminary specification
2
BAP63-01
16
f (GHz)
V
R
stripline circuit.
(V)
20
3

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