irs2608d International Rectifier Corp., irs2608d Datasheet
irs2608d
Related parts for irs2608d
irs2608d Summary of contents
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... RoHS compliant Description The IRS2608D( high voltage, high speed power MOSFET an IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction ...
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... Qualification standards can be found at International Rectifier’s web site †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. www.irf.com IRS2608DSPbF Industrial Comments: This IC has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level ...
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... V to +600 V. Logic state held for V S Note 2: Operational for transient negative VS of COM - 50 V with pulse width. Guaranteed by design. Refer to the Application Information section of this datasheet for more details. www.irf.com Definition Definition – IRS2608DSPbF Min. Max. Units -0.3 620 ...
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... OFF - DT LO-HO HO- Definition - V BIAS O O supply current BS supply current CC supply undervoltage positive going supply undervoltage negative going IRS2608DSPbF Min Typ Max Units Test Conditions 120 250 380 600 600 V 120 250 380 S — — — ...
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... Functional Block Diagrams www.irf.com IRS2608DSPbF 5 ...
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... High side floating supply return Low side and logic fixed supply CC LO Low side gate drive output Low side return COM www.irf.com Description Lead Assignments HIN HO 2 LIN COM Lead SOIC IRS 2608DS IRS2608DSPbF ...
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... Additional Documentation IGBT/MOSFET Gate Drive The IRS2608D HVICs are designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is defined as I ...
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... DT; external deadtimes larger than DT are not modified by the gate driver. Figure 5 illustrates the deadtime period and the relationship between the output gate signals. The deadtime circuitry of the IRS2608D is matched with respect to the high- and low-side outputs. Figure 5 defines the two deadtime parameters (i.e., DT ...
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... The inputs of this IC are compatible with standard CMOS and TTL outputs. The IRS2608D has been designed to be compatible with 3.3 V and 5 V logic-level signals. The IRS2608D features an integrated 5.2 V Zener clamp on the /LIN. igure 6 illustrates an input signal to the IRS2608D, its input threshold values, and the logic state of the result of F the input signal ...
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... Shoot-Through Protection The IRS2608D high-voltage ICs is equipped with shoot-through protection circuitry (also known as cross-conduction prevention circuitry). www.irf.com ...
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... Integrated Bootstrap Functionality The IRS2608D embeds an integrated bootstrap FET that allows an alternative drive of the bootstrap supply for a wide range of applications. A bootstrap FET is connected between the floating supply V The bootstrap FET is suitable for most PWM modulation schemes, including trapezoidal control, and can be used either in parallel with the external bootstrap network (diode+ resistor replacement of it ...
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... HIN LIN BootStrap Fet 1.1*Vcc HIN LIN BootStrap Fet VB + 1.1*Vcc - www.irf.com 20 us timer Timer is reset counter 20 us Fixed timer counter Figure 9: BootFET timing diagram IRS2608DSPbF Timer is reset Timer expired Timer expired 12 ...
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... D3 to Q4. At the same instance, the voltage node, V the positive DC bus voltage to the negative DC bus voltage. www.irf.com S1 Figure 10: Three phase inverter Figure 12: D2 conducting IRS2608DSPbF , swings from the positive DC bus voltage to DC+ BUS D1 Q1 OFF ...
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... International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding applications. An indication of the IRS2608D’s robustness can be seen in Figure 18, where there is represented the IRS2608D Safe Operating Area at V falling in the grey area (outside SOA) may lead to IC permanent damage; viceversa unwanted functional anomalies or permanent damage to the IC do not appear if negative Vs transients fall inside SOA ...
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... Figure 18: Even though the IRS2608D has been shown able to handle these large negative V recommended that the circuit designer always limit the negative V layout and component use. PCB Layout Tips Distance between high and low voltage components: It’s strongly recommended to place the components tied to the ...
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... Figure 19: Antenna Loops ) between the V IN spikes remain excessive, further steps may be taken to S (see Figure 21). See DT04 Figure 21: V IRS2608DSPbF and COM pins. A ceramic 1 μF CC pin and the switch node (see Figure 20), S www.irf.com clamping diode S for more ...
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... Figures 22-41 provide information on the experimental performance of the IRS2608D(S) HVIC. The line plotted in each figure is generated from actual lab data. A large number of individual samples from multiple wafer lots were tested at three temperatures (-40 ºC, 25 ºC, and 125 ºC) in order to generate the experimental (Exp.) curve. The line labeled Exp. consist of three data points (one data point at each of the tested temperatures) that have been connected together to illustrate the understood trend ...
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... C) 100 100 125 - 100 125 - Fig. 31. V IRS2608DSPbF Exp. - Temperature ( C) Fig. 27. V Supply UV Hysteresis vs. BS Temperature Exp. - Temperature ( C) Fig Quiescent Supply Current vs. BS Temperature Exp ...
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... C) Fig. 33. V 400 300 200 100 0 75 100 125 - Exp -50 75 100 125 o C) IRS2608DSPbF Exp. - Temperature ( C) Threshold vs. Temperature BSUV- Exp. - Temperature ( C) Fig. 35. High Level Output Voltage vs. Temperature - ...
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... Fig. 40. HIN V vs. Temperature TH- www.irf.com Exp 100 125 -50 -25 Fig. 39. HIN V 600 500 400 Exp. 300 200 100 0 75 100 125 -50 Fig. 41. Tbson_V IRS2608DSPbF 100 o Temperature ( C) vs. Temperature TH+ - 100 o Temperature ( C) TYP vs. Temperature CC 125 125 20 ...
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... Case Outlines www.irf.com IRS2608DSPbF 21 ...
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... Metric Min Max Min 329.60 330.25 12.976 20.95 21.45 0.824 12.80 13.20 0.503 1.95 2.45 0.767 98.00 102.00 3.858 n/a 18.40 n/a 14.50 17.10 0.570 12.40 14.40 0.488 IRS2608DSPbF Imperial Max 0.318 0.161 0.484 0.218 0.255 0.208 n/a 0.062 D A Imperial Max 13.001 0.844 0.519 0.096 4.015 0.724 0.673 0.566 22 ...
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... International Rectifier. The specifications mentioned in this document are subject to change without notice. This document For technical support, please contact IR’s Technical Assistance Center www.irf.com ORDER INFORMATION 8-Lead SOIC IRS2608DSPbF 8-Lead SOIC Tape & Reel IRS2608DSTRPbF supersedes and replaces all information previously supplied. http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 ...