unr521t Panasonic Corporation of North America, unr521t Datasheet - Page 2

• Manufacturer Part Number: unr521t
• Description: Silicon Npn Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

UNR521x Series
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR5210/5215/5216/5217
cutoff current UNR5213
(Collector
open)
Forward
current
transfer
ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance UNR5219
2. * : Rank classification
UNR5212/5214/521D/
521E/521M/521N/521T
UNR521Z
UNR5211
UNR521F/521K
UNR5219
UNR5218/521L/521V
UNR521V
UNR5218/521K/521L
UNR5219/521D/521F
UNR5211
UNR5212/521E
UNR521Z
UNR5213/5214/521M
UNR521N/521T
UNR5210
UNR521V
UNR5213/521K
UNR521D
UNR521E
UNR5218
UNR521M/521V
UNR5216/521F/521L/521N
UNR521Z
UNR5211/5214/5215/521K
UNR5212/5217/521T
UNR5210/5213/521D/521E
Parameter
Rank
h
FE
*
/5215
160 to 260
*
/5216
Q
*
/5217
*
210 to 340
a
Symbol
V
= 25°C ± 3°C
V
V
I
V
I
I
V
R
CE(sat)
h
CBO
CEO
EBO
R
f
CBO
CEO
FE
OH
OL
T
1
290 to 460
I
I
V
V
V
V
I
I
V
V
V
V
V
V
C
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CB
S
= 10 µA, I
= 2 mA, I
= 10 mA, I
= 10 mA, I
SJH00024CED
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 10 V, I
160 to 460
B
Conditions
C
No-rank
E
B
B
B
B
B
B
B
B
C
E
E
= 0
= 0
= 0
= 0.5 V, R
= 2.5 V, R
= 3.5 V, R
= 10 V, R
= 6.0 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= 1.5 mA
= −2 mA, f = 200 MHz
L
L
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
Min
160
4.9
50
50
20
30
35
60
60
80
80
6
0.51
Typ
150
1.0
2.2
4.7
10
22
47
+30%
Max
0.01
0.25
200
400
460
0.1
0.5
0.1
0.2
0.4
0.5
1.0
1.5
2.0
0.2
20
MHz
Unit
mA
µA
kΩ

V
V
V
V
V