unr5227 Panasonic Corporation of North America, unr5227 Datasheet
unr5227
Manufacturer Part Number
unr5227
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR5227.pdf
(5 pages)
Transistors with built-in Resistor
UNR5225/5226/5227
Silicon NPN epitaxial planar type
For muting
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• Low collector-emitter saturation voltage V
• The use with high current value is possible
• UNR5225
• UNR5226
• UNR5227
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current
transfer ratio
Collector-emitter saturation voltage
Input resistance
Resistance ratio
ON resistance
Transition frequency
muting circuit
2. * : Refer to R
Parameter
Parameter
Marking symbol
*
UNR5227
UNR5225/5226
UNR5226
UNR5227
UNR5225
UNR5227
UNR5226
UNR5227
UNR5225
on
FW
FY
FZ
measurement circuit
4.7 kΩ
6.8 kΩ
10 kΩ
(R
a
Symbol
Symbol
V
1
= 25°C ± 3°C
R
V
V
V
V
V
V
I
I
)
T
CE(sat)
R
h
CBO
P
EBO
R
1
I
T
f
CBO
CEO
EBO
CBO
CEO
EBO
a
stg
FE
/R
C
T
on
T
j
1
= 25°C
2
CE(sat)
−55 to +150
6.8 kΩ
(R
Rating
I
I
I
V
V
V
I
V
V
600
150
150
C
C
E
C
, optimum for the
2
30
20
CB
CB
EB
CE
I
5
)
= 1 µA, I
= 1 µA, I
= 1 mA, I
= 50 mA, I
= 7 V, R
SJH00043BED
= 10 V, I
= 30 V, I
= 5 V, I
= 5 V, I
L
E
C
B
Conditions
C
C
Unit
mW
mA
E
= 1 kΩ, f = 1 kHz
°C
°C
= 0
= 0
B
E
V
V
V
= 0
= 0
= 50 mA
= −50 mA, f = 200 MHz
= 0
= 2.5 mA
Internal Connection
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
−30%
B
Min
100
0.8
30
20
70
5
2
R
R
1
2
0.95
Typ
200
4.7
6.8
1.0
1.1
1.5
10
SMini3-G1 Package
+30%
Max
600
1.2
80
1
1
C
E
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
mV
µA
µA
kΩ
V
V
V
Ω
1
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unr5227 Summary of contents
Page 1
... The use with high current value is possible ■ Resistance by Part Number Marking symbol • UNR5225 FZ 10 kΩ • UNR5226 FY 4.7 kΩ • UNR5227 FW 6.8 kΩ ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current ...
Page 2
UNR5225/5226/5227 ■ Electrical Characteristics (continued) T • R measurement circuit Common characteristics chart 250 200 150 100 120 160 ...
Page 3
MHz 100 ( V ) Collector-base voltage V CB Characteristics charts of UNR5226 500 = 400 = ...
Page 4
... UNR5225/5226/5227 Characteristics charts of UNR5227 400 = 25° 300 I 1 0.9 mA 0.8 mA 0.7 mA 200 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0 Collector-emitter voltage V CE MHz Collector-base voltage CE(sat ...
Page 5
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...