unr5174g Panasonic Corporation of North America, unr5174g Datasheet
unr5174g
Manufacturer Part Number
unr5174g
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR5174G.pdf
(4 pages)
Transistors with built-in Resistor
UNR5174G
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2007
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Forward voltage
Transition frequency
reduction of the number of parts.
automatic insertion through tape packing and magazine packing
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
Symbol
V
R
= 25°C ± 3°C
V
V
V
V
I
I
I
V
V
1
T
CE(sat)
h
CBO
V
FE
P
CEO
EBO
R
CBO
I
T
CBO
f
CEO
CEO
a
stg
FE
OH
OL
/ R
C
T
T
j
1
F
= 25°C
2
−55 to +150
Rating
−100
I
I
V
V
V
V
I
V
V
I
V
−50
−50
150
150
C
C
C
F
CB
CE
EB
CE
CC
CC
CB
= 100 mA
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00217AED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
mA
°C
°C
B
C
V
V
E
B
B
C
B
E
B
E
= 0
= 0
= 0
= − 0.3 mA
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= 1 mA, f = 200 MHz
■ Package
■ Internal Connection
• Code
• Marking Symbol: 7P
• Pin Name
L
L
= 1 kΩ
SMini3-F2
1: Base
2: Emitter
3: Collector
= 1 kΩ
B
−30%
−4.9
0.17
Min
−50
−50
(10 kΩ)
80
R
1
(47 kΩ)
0.21
0.95
Typ
10
80
R
2
− 0.25
+30%
− 0.1
− 0.5
− 0.2
− 0.2
Max
0.25
1.20
C
E
MHz
Unit
mA
µA
kΩ
V
V
V
V
V
V
1
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unr5174g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR5174G Silicon PNP epitaxial planar type For digital circuits ■ Features • High forward current transfer ratio h • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). UNR5174G 160 120 120 160 ( °C ) Ambient temperature T a 300 = − 250 = 75° 200 25°C 150 −25°C 100 50 0 −1 −10 − ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...