unr32a7 Panasonic Corporation of North America, unr32a7 Datasheet
unr32a7
Manufacturer Part Number
unr32a7
Description
Silicon Npn Epitaxial Planar Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR32A7.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
unr32a7001ER
Manufacturer:
PANASONI
Quantity:
8 220
Transistors with built-in Resistor
UNR32A7
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
T
1
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00065BED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: HE
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
B
−30%
3
0.80
1.20
1
Min
160
4.9
50
50
R
(0.40)
±0.05
±0.05
1
2
(22 kΩ)
Typ
150
22
SSSMini3-F1 Package
+30%
Max
0.01
0.25
460
0.1
0.5
0.2
0.10
E
C
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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unr32a7 Summary of contents
Page 1
... Transistors with built-in Resistor UNR32A7 Silicon NPN epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... UNR32A7 120 100 100 120 140 ( °C ) Ambient temperature T a 400 = 85° 25°C 300 −25°C 200 100 100 Collector current I (mA) C 0 ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...