unr4221 Panasonic Corporation of North America, unr4221 Datasheet

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unr4221

Manufacturer Part Number
unr4221
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• New S type package, allowing supply with the radial taping
• UNR4221 (UN4221)
• UNR4222 (UN4222)
• UNR4223 (UN4223)
• UNR4224 (UN4224)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current
(Collector open)
Forward current
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
reduction of the number of parts
Parameter
Parameter
UNR4221
UNR4222
UNR4223/4224
UNR4221
UNR4222
UNR4223/4224
2.2 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
a
(R
Symbol
Symbol
V
= 25°C ± 3°C
V
V
V
V
I
I
I
V
V
T
CE(sat)
h
CBO
1
P
CEO
EBO
I
T
CBO
CEO
CBO
CEO
a
)
stg
FE
OH
OL
C
T
j
= 25°C
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
500
300
150
C
C
C
Note) The part numbers in the parenthesis show conventional part number.
50
50
CB
CE
EB
CE
CC
CC
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
= 10 µA, I
= 2 mA, I
= 100 mA, I
SJH00021BED
(R
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 5 V, V
= 5 V, V
2
)
B
Conditions
C
Unit
mW
mA
E
°C
°C
B
B
B
C
E
V
V
= 0
= 0
= 0
B
= 0.5 V, R
= 3.5 V, R
= 0
= 0
= 100 mA
= 5 mA
L
L
= 500 Ω
= 500 Ω
Internal Connection
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
B
Min
4.9
50
50
40
50
60
4.0
2
±0.2
R
R
1
2
3
Typ
2.0
±0.2
NS-B1 Package
Max
0.25
1.0
1.0
5.0
2.0
1.0
0.2
C
E
0.7
1: Emitter
2: Collector
3: Base
0.45
±0.1
Unit: mm
+0.20
–0.10
Unit
mA
µA
µA
V
V
V
V
V
1

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unr4221 Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping ■ Resistance by Part Number • UNR4221 (UN4221) • UNR4222 (UN4222) • UNR4223 (UN4223) • UNR4224 (UN4224) ■ Absolute Maximum Ratings T ...

Page 2

... Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  400 300 200 100 120 160 ( °C ) Ambient temperature T a Characteristics charts of UNR4221  300 = 25° 1 250 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 ...

Page 3

... Collector-emitter voltage V (V) CE  MHz = 25° − Collector-base voltage V (V) CB UNR4221/4222/4223/4224  25° 0.4 0.6 0.8 1.0 1.2 1.4 Input voltage V (V) IN  CE(sat ...

Page 4

... UNR4221/4222/4223/4224 Characteristics charts of UNR4223  240 = 25° 200 = 1 160 0.9 mA 0.8 mA 120 0.7 mA 0 0 0 Collector-emitter voltage V (V) CE  MHz = 25° − ...

Page 5

... MHz = 25° − Collector-base voltage V (V) CB UNR4221/4222/4223/4224  25° 0.4 0.6 0.8 1.0 1.2 1.4 Input voltage V (V) IN SJH00021BED  0 25°C ...

Page 6

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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