unrf1a7 Panasonic Corporation of North America, unrf1a7 Datasheet
unrf1a7
Manufacturer Part Number
unrf1a7
Description
Transistor With Builtin Resistors Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNRF1A7.pdf
(3 pages)
Transistors with built-in Resistor
UNRF1A7
Silicon PNP epitaxial planar type
For digital circuits
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: november 2005
Suitable for high-density mounting and downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
= 25°C
Symbol
V
V
T
P
I
T
CBO
CEO
Symbol
stg
C
V
R
T
j
V
V
I
I
I
V
V
1
h
CE(sat)
CBO
CEO
EBO
R
f
CBO
CEO
FE
OH
OL
/ R
T
1
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
–50
–50
–80
100
125
CB
CE
EB
CE
CC
CC
CB
= –10 µA, I
= –2 mA, I
= –10 mA, I
= –50 V, I
= –50 V, I
= –6 V, I
= –10 V, I
= –5 V, V
= –5 V, V
= –10 V, I
SJH00112AED
C
B
E
B
B
Unit
mW
Conditions
B
C
E
E
mA
B
= 0
°C
°C
= 0
V
V
= 0
= – 0.5 V, R
= –2.5 V, R
= 0
= 0
= –5 mA
= 1 mA, f = 200 MHz
= – 0.3 mA
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 3Y
Internal Connection
1 : Base
2 : Emitter
3 : Collecter
3
1.00
—30%
±0.05
Min
–4.9
–50
–50
160
B
2
1
R
R
1
2
Typ
3
22
80
∞
0.25
±0.05
0.65
0.39
– 0.01
– 0.25
+30%
Max
– 0.1
– 0.5
– 0.2
±0.01
460
ML3-N2 Package
0.25
+0.01
−0.03
C
E
±0.05
Unit : mm
1
2
0.05
MHz
Unit
mA
kΩ
±0.03
µA
µA
V
V
V
V
V
1
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unrf1a7 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNRF1A7 Silicon PNP epitaxial planar type For digital circuits Features Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) Absolute Maximum Ratings T = 25° ...
Page 2
... V ) Collector-emitter voltage V CE UNRF1A7_ 25° MHz 1 0.1 0 −5 −10 −15 −20 −25 −30 −35 −40 ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...