s29al016m Meet Spansion Inc., s29al016m Datasheet - Page 14

• Manufacturer Part Number: s29al016m
• Description: 16 Megabits 2m X 8-bits / 1m X 16-bits
• Manufacturer: Meet Spansion Inc.

12
Writing Commands/Command Sequences
Program and Erase Operation Status
Standby Mode
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No command is necessary in
this mode to obtain array data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the com-
mand register contents are altered.
See
table for timing specifications and to
DC Characteristics table represents the active current specification for reading
array data.
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to
information.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
Sequence”
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Tables 2 and 3 indicate the address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely select a sector. The
“Command Definitions”
or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the
Command Sequence”
I
the write mode. The
bles and timing diagrams for write operations.
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and I
formation, and to
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
CC2
“Reading Array Data”
in the DC Characteristics table represents the active current specification for
CC
read specifications apply. Refer to
IL
, and OE# to V
section has details on programming data to the device using both
“AC Characteristics”
“AC Characteristics”
sections for more information.
section has details on erasing a sector or the entire chip,
IH
for more information. Refer to the AC
.
S29AL016M
Figure 13
D a t a
for timing diagrams.
section contains timing specification ta-
“Write Operation Status”
“Autoselect Mode”
for the timing diagram. I
“Word Configuration”
S h e e t
“Word Program Command
Read Operations
and
for more in-
“Autoselect
CC1
for more
S29AL016M_00_A7 October 11, 2006
in the