ne5520279a-t1a Renesas Electronics Corporation., ne5520279a-t1a Datasheet

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ne5520279a-t1a

Manufacturer Part Number
ne5520279a-t1a
Description
Necs 3.2 V, 2 W, L&s Band Medium Power Silicon Ld-mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
• High output power
• High power added efficiency : η
• High linear gain
• Surface mount package
• Single supply
APPLICATION
• Digital cellular phones
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5520279A-T1
NE5520279A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE5520279A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
: 3.2 V DCS1800 Handsets
Package
79A
: P
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
add
out
DS
L
= 10 dB TYP. (V
= 32.0 dBm TYP. (V
= 2.8 to 6.0 V
= 45% TYP. (V
The mark
DATA SHEET
Marking
shows major revised points.
A2
DS
DS
= 3.2 V, I
= 3.2 V, I
DS
= 3.2 V, I
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
Dset
= 700 mA, f = 1.8 GHz, P
= 700 mA, f = 1.8 GHz, P
Dset
SILICON POWER MOS FET
= 700 mA, f = 1.8 GHz, P
NE5520279A
Supplying Form
   
NEC Compound Semiconductor Devices 2001, 2003
in
in
= 25 dBm)
= 5 dBm)
in
= 25 dBm)

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ne5520279a-t1a Summary of contents

Page 1

... Part Number Package NE5520279A-T1 79A NE5520279A-T1A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5520279A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

... 700 µ DSS DSS f = 1.8 GHz 3.2 V, out dBm 700 mA (RF OFF), Note1 add Dset L Data Sheet PU10123EJ03V0DS NE5520279A MIN. TYP. MAX. Unit 2.8 3.0 6 2.0 3.0 V − 800 1 000 dBm MIN. TYP. MAX. Unit − ...

Page 3

... GHz dBm in 2 000 35 100 1 500 000 25 50 500 Gate to Source Voltage V Data Sheet PU10123EJ03V0DS NE5520279A 1 250 P out 1 000 100 I D 750 75 η d η add 500 50 250 ( ...

Page 4

... Microwave] → [Device Parameters] URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (GHz) Z (Ω 1.77 −j6.71 1.25 −j5.73 1.8 Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 700 mA 1.8 GHz) D Note (Ω) OL Data Sheet PU10123EJ03V0DS NE5520279A ...

Page 5

... EVALUATION BOARD FOR 1.8 GHz Symbol C1 Circuit Board 32.0 Value Comment 4.7 pF 2.4 pF 2 000 pF 0.22 µ F 3.3 µ 16V 1 000 Ω 0.4 mm, ε 4.5 R4775 Data Sheet PU10123EJ03V0DS NE5520279A Unit : 30 ...

Page 6

... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 6 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10123EJ03V0DS NE5520279A Drain 0.8 MAX. ...

Page 7

... Data Sheet PU10123EJ03V0DS NE5520279A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 7 ...

Page 8

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Please check with an NEC sales representative for Data Sheet PU10123EJ03V0DS NE5520279A The M8E 00 0110 ...

Page 9

... Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5520279A 0306 ...

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