ne552r679a Renesas Electronics Corporation., ne552r679a Datasheet

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ne552r679a

Manufacturer Part Number
ne552r679a
Description
3.0 V Operation Silicon Rf Power Ld-mos Fet For 460 Mhz 0.6 W Transmission Amplifiers
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10125EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2
technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can
deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
• High output power
• High power added efficiency : η
• High linear gain
• Surface mount package
• Single supply
APPLICATION
• Family Radio Service
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE552R679A-T1
NE552R679A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE552R679A
3.0 V OPERATION SILICON RF POWER LDMOS FET
FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
: 3.0 V Handsets
Package
79A
: P
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
add
out
DS
L
= 20 dB TYP. (V
= 28.0 dBm TYP. (V
= 2.8 to 6.0 V
= 60% TYP. (V
The mark
DATA SHEET
Marking
shows major revised points.
AU
DS
DS
= 3.0 V, I
= 3.0 V, I
DS
= 3.0 V, I
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
Dset
= 300 mA, f = 460 MHz, P
= 300 mA, f = 460 MHz, P
Dset
SILICON POWER MOS FET
= 300 mA, f = 460 MHz, P
NE552R679A
Supplying Form
   
NEC Compound Semiconductor Devices 2001, 2003
in
in
= 15 dBm)
= 5 dBm)
in
= 15 dBm)

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ne552r679a Summary of contents

Page 1

... FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 28 ...

Page 2

... 300 µ DSS DSS f = 460 MHz 3.0 V, out dBm 300 mA (RF OFF), Note1 add Dset L Data Sheet PU10125EJ03V0DS NE552R679A MIN. TYP. MAX. Unit 2.8 3.0 6 2.0 3.0 V − 300 500 dBm MIN. TYP. MAX. Unit − ...

Page 3

... MHz 100 mA Dset 1 000 25 100 750 20 75 500 15 50 250 − Input Power P Data Sheet PU10125EJ03V0DS NE552R679A (dBm) out 1 250 1 000 100 P out 750 75 η d η add 500 250 25 ...

Page 4

... Microwave] → [Device Parameters] URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (MHz) Z (Ω 460 7.47 +j18.24 4.82 +j5.04 Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 300 mA 460 MHz) D Note (Ω) OL Data Sheet PU10125EJ03V0DS NE552R679A ...

Page 5

... EVALUATION BOARD FOR 460 MHz Symbol Circuit Board 48.0 Value 9 3 000 pF 0.33 µ F 3.3 µ 16V 1 000 Ω 0.4 mm, ε 4.5 R4775 Data Sheet PU10125EJ03V0DS NE552R679A Unit : 30 Comment 5 ...

Page 6

... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 6 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10125EJ03V0DS NE552R679A Drain 0.8 MAX. ...

Page 7

... Data Sheet PU10125EJ03V0DS NE552R679A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 7 ...

Page 8

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Please check with an NEC sales representative for Data Sheet PU10125EJ03V0DS NE552R679A The M8E 00 0110 ...

Page 9

... Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE552R679A 0306 ...

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