tc74hct32af TOSHIBA Semiconductor CORPORATION, tc74hct32af Datasheet - Page 3

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tc74hct32af

Manufacturer Part Number
tc74hct32af
Description
Quad 2-input Or Gate
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Electrical Characteristics
DC Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
AC Characteristics
Output transition time
Propagation delay time
AC Characteristics
Output transition time
Propagation delay
time
Input capacitance
Power dissipation
capacitance
Note:
Characteristics
Characteristics
C
current consumption without load.
Average operating current can be obtained by the equation:
Characteristics
PD
I
is defined as the value of the internal equivalent capacitance which is calculated from the operating
CC
(opr) = C
Symbol
V
Symbol
V
V
I
V
I
CC
I
OH
(C
(C
OL
IN
t
t
C
t
t
IH
C
C
IL
TLH
THL
pLH
pHL
PD
PD
IN
L
L
(Note)
・V
= 15 pF, V
= 50 pF, input: t
CC
V
= V
V
= V
V
V
Per input:
V
Other input: V
IN
IN
IN
IN
IN
・f
IH
IH
IN
= V
= V
= 0.5 V or 2.4 V
Symbol
or V
or V
+ I
t
t
t
t
CC
CC
TLH
THL
pLH
pHL
CC
CC
IL
IL
or GND
or GND
Test Condition
/4 (per gate)
= 5 V, Ta = 25°C, input: t
Test Condition
I
I
I
I
CC
OH
OH
OL
OL
r
= 20 μA
= 4 mA
or GND
= −20 μA
= −4 mA
= t
f
= 6 ns)
3
Test Condition
V
V
4.5~5.5
4.5~5.5
CC
CC
4.5
4.5
4.5
4.5
5.5
5.5
5.5
4.5
5.5
4.5
5.5
(V)
(V)
4.18
Min
Min
2.0
4.4
r
= t
Ta = 25°C
Ta = 25°C
f
= 6 ns)
TC74HCT32AP/AF/AFN
Typ.
4.31
0.17
Typ.
4.5
0.0
13
11
23
8
7
5
Max
0.26
±0.1
Max
Min
0.8
0.1
1.0
2.0
15
13
20
18
10
Ta = −40~85°C
Ta = −40~85°C
4.13
Typ.
Min
Min
2.0
4.4
10
6
2007-10-01
0.33
±1.0
10.0
Max
Max
Max
0.8
0.1
2.9
12
16
19
16
25
23
10
Unit
Unit
Unit
mA
μA
μA
pF
pF
ns
ns
ns
ns
V
V
V
V

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