EL5210C Elantec Semiconductor, Inc. (acquired by Intersil), EL5210C Datasheet - Page 3

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EL5210C

Manufacturer Part Number
EL5210C
Description
Dual 25MHz Rail-to-Rail, I/o op Amps
Manufacturer
Elantec Semiconductor, Inc. (acquired by Intersil)
Datasheet

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Electrical Characteristics
V
Input Characteristics
V
TCV
I
R
C
CMIR
CMRR
A
Output Characteristics
V
V
I
I
Power Supply Performance
PSRR
I
Dynamic Performance
SR
t
BW
GBWP
PM
CS
d
d
S
S
B
SC
OUT
S
G
P
IN
IN
VOL
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
+ = 5V, V
OS
OL
OH
Parameter
OS
S
- = 0V, R
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
Output Swing Low
Output Swing High
Short Circuit Current
Output Current
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Slew Rate
Settling to +0.1% (A
-3dB Bandwidth
Gain-Bandwidth Product
Phase Margin
Channel Separation
Differential Gain
Differential Phase
L
= 1kΩ and C
[2]
Description
[3]
[3]
L
V
= 12pF to 2.5V, T
= +1)
[1]
A
= 25°C unless otherwise specified.
V
V
for V
0.5V ≤ V
I
I
V
No Load
1V ≤ V
(A
f = 5MHz
R
R
L
L
F
F
CM
CM
S
V
= -5mA
= 5mA
= R
= R
is moved from 4.5V to 15.5V
= +1), V
= 2.5V
= 2.5V
IN
G
G
OUT
from -0.5V to 5.5V
= 1kΩ and V
= 1kΩ and V
OUT
≤ 4V, 20% o 80%
O
3
≤ 4.5V
= 2V Step
Condition
30MHz Rail-to-Rail Input-Output Op Amps
OUT
OUT
= 1.4V
= 1.4V
EL5210C/EL5410C
Min
-0.5
4.8
45
65
60
±120
Typ
0.30
0.66
100
±30
140
110
4.9
2.5
66
80
80
33
30
20
50
3
7
2
1
2
Max
+5.5
3.75
200
15
60
µV/°C
MHz
MHz
Unit
V/µs
mV
GΩ
mV
mA
mA
mA
nA
pF
dB
dB
dB
dB
ns
%
V
V
°
°

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