isd1447as1 ISAHAYA ELECTRONICS CORPORRATION, isd1447as1 Datasheet

isd1447as1

Manufacturer Part Number

isd1447as1

Description

For Low Frequency Powor Amplify Application Silicon Npn Epitaxial Type

Manufacturer

ISAHAYA ELECTRONICS CORPORRATION

Datasheet

1.ISD1447AS1.pdf (3 pages)

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ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Parameter

Symbol

CBO

EBO

CEO

DESCRIPTION

for 2 to 3.5W output low frequency power amplify application.

FEATURE

●High collector current. I

●High gain band width product. fT= 100MHz typ

●High collecot dissipation. Pc= 600mW

●Excellent linearity of DC forward current gain.

APPLICATION

2 to 3.5W output low frequency amplify circuit of radio,

cassette tape recorder, mini stereo.

stg

※） It shows hFE classification in right table.

Complementary with ISB1035AS1.

ISD1447AS1 is a silicon NPN epitaxial type transistor designed

VCE(sat)

hFE※

PRELIMINARY

Notice: This is not a final specification Some

parametric are subject to change.

CBO

EBO

)

CBO

EBO

CEO

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Peak collector current

Collector dissipation

Junction temperature

Storage temperature

（Ta=25℃）

Parameter

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Voltage

Gain band width product

Parameter

= 1.5A

（Ta=25℃）

ISAHAYA ELECTRONICS CORPORATION

-55∼+150

Ratings

+150

600

1.5

= 10μA , I

= 100μA , R

=500mA , I

=2V , I

=6V , I

= 25V , I

= 1V , I

Unit

℃

= 0mA

= -10mA

= 500mA

=0mA

= 0mA

= 25mA

FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION

Test conditions

= ∞

OUTLINE DRAWING

hFE item

Item

55∼110

TERMINAL CONNECTER

SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉

①：EMITTER

②：COLLECTOR

③：BASE

Min

90∼180

①

JEDEC：

1.27 1.27

JEITA：

4.0

②

ISD1447AS1

Limits

Typ

100

③

150∼300

0.1

0.45

Max

300

0.5

MHz

Unit

μA

Unit：ｍｍ

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isd1447as1 Summary of contents

Page 1

... PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION ISD1447AS1 is a silicon NPN epitaxial type transistor designed for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE ●High collector current 1.5A CM ●High gain band width product. fT= 100MHz typ ● ...

Page 2

... Notice: This is not a final specification Some parametric are subject to change. TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 1000 800 600 400 200 AMBIENT TEMPERATURE Ta(℃) FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION 120 160 200 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 SILICON NPN EPITAXIAL TYPE ...

Page 3

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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