tb2924afg TOSHIBA Semiconductor CORPORATION, tb2924afg Datasheet - Page 7

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tb2924afg

Manufacturer Part Number
tb2924afg
Description
Class D, 20 W ? 2-channel Btl Low-frequency Power Amplifier Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TB2924AFG
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics 1
(unless otherwise specified, V
Quiescent supply current
Output power
Efficiency
Total harmonics distortion
Voltage gain
Channel balance
Input impedance
Crosstalk
Output noise voltage
Switching frequency
Standby supply current
Power transistor ON resistance
Mute attenuation level
Control voltage for pin 17 muting
switch
Control voltage for pin 16 standby
switch
Control voltage for pin 26 oscillator
on/off switch
Characteristics
CC
ATT
V
V
P
P
P
P
V
V
V
V
R
Symbol
MUTE off
MUTE on
OUT
OUT
OUT
OUT
OSC on
OSC off
I
STB off
STB on
η (1)
η (2)
THD
DS-ON
= 15 V, f = 1 kHz, R
C.T.
V
I
CCQ
R
G
CB
f
STB
sw
NO
MUTE
IN
V
(1)
(2)
(3)
(4)
Circuit
Test
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
7
Vin = 0
THD = 10%
V
R
THD = 10%
R
THD = 10%
P
P
P
V
V
R
V
R
B.W. = DIN AUDIO
During standby
0dB = V
Not muted
Muted
Amplifier operating
(not standby)
Amplifier stopped (standby on)
Oscillator operating
Oscillator stopped
CC
L
L
OUT
OUT
OUT
OUT
OUT
g
OUT
g
= 4 Ω, V
= 4 Ω, V
= 10 kΩ,
= 10 kΩ,
= 18 V, THD = 10%
= 10 W
= 1.0 W
= 1 W
= 0.775 Vrms
= 0.775 Vrms
= 0.775 Vrms
OUT
g
Test Condition
= 600 Ω, R
CC
CC
= 0.775 Vrms
= 12 V,
= 15 V,
L
= 8 Ω, Ta = 25°C)
GND
GND
GND
12.5
11.5
32.5
−1.0
Min
−56
160
−71
1.8
1.8
1.8
18
80
63
9
Typ.
10.5
19.5
−65
200
−78
0.1
0.2
0.2
0.3
55
15
13
88
66
34
30
0
TB2924AFG
2007-01-26
Max
35.5
0.34
V
V
V
300
0.3
1.0
0.3
0.9
1.1
0.5
70
CC
CC
CC
mVrms
Unit
kHz
mA
mA
dB
dB
kΩ
dB
dB
W
%
%
V
V
V

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