bgd802n NXP Semiconductors, bgd802n Datasheet - Page 7

• Manufacturer Part Number: bgd802n
• Description: Catv Amplifier Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5 Bandwidth 40 to 550 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The module normally operates at V
2001 Nov 2
G
SL
FL
s
s
s
CTB
X
CSO
d
V
F
I
tot
SYMBOL
11
22
21
2
mod
o
860 MHz, 18.5 dB gain power doubler amplifier
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 549.25 MHz; V
= 55.25 MHz; V
= 493.25 MHz; V
= 540.25 MHz; V
= 547.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
PARAMETER
r
q
p
q
= 44 dBmV;
= 548.5 MHz.
= V
= 44 dBmV;
= V
= V
f
r
= 538.25 MHz.
o
o
o
;
6 dB;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
f = 50 MHz
f = 550 MHz
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 550 MHz
f = 50 MHz
77 channels flat; V
measured at 547.25 MHz
77 channels flat; V
measured at 55.25 MHz
77 channels flat; V
measured at 548.5 MHz
note 1
d
see Table 1
note 3
im
case
= 60 dB; note 2
= 30 C; Z
CONDITIONS
7
S
= Z
o
o
o
= 44 dBmV;
= 44 dBmV;
= 44 dBmV;
L
= 75
18
18.5
0.2
20
18.5
17
16
20
18.5
17
66
MIN.
45
18.5
32
27
24
22
33
29
22
395
TYP.
Product specification
BGD802N
19
2
+45
410
MAX.
0.2
65
63
65
74
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
UNIT