bts5235l Infineon Technologies Corporation, bts5235l Datasheet - Page 9

• Manufacturer Part Number: bts5235l
• Description: Smart High-side Power Switch
• Manufacturer: Infineon Technologies Corporation

Unless otherwise specified:
T
Pos.
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamic temperature increase
3.1.15 Storage Temperature
ESD Susceptibility
3.1.16 ESD susceptibility HBM
1)
2) Load Dump is specified in ISO 7636,
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
4) Pulse shape represents inductive switch off:
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm
Data Sheet
j
= 25 °C
R
operating range. Protection features are not designed for continuous repetitive operation.
layer, 70 µm thick) for
and
L
Parameter
while switching
describe the complete circuit impedance including line, contact and generator impedances
V
bb
connection. PCB is vertical without blown air.
IN, SEN
R
I
is the internal resistance of the Load Dump pulse generator
OUT
IS
I
L
(t) =
Symbol
T
∆T
T
V
j
stg
ESD
I
9
j
L
(0) * (1 -
Smart High-Side Power Switch
t
Limit Values Unit Test
min.
/
-40
-55
-1
-2
-4
t
-
pulse
); 0 <
max.
Electrical Characteristics
150
150
t
60
1
2
4
<
2
t
pulse
copper heatsinking area (one
°C
°C
°C
kV
V1.0, 2005-12-19
Conditions
according to
EIA/JESD
22-A 114B
BTS 5235L