si7634bdp Vishay, si7634bdp Datasheet - Page 4

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si7634bdp

Manufacturer Part Number
si7634bdp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Si7634BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.1
0.6
0.3
10
1
0
0.0
- 50
I
D
I
= 5 mA
D
- 25
Source-Drain Diode Forward Voltage
= 250 µA
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
Limited by R
75
0.8
0.01
T
100
0.1
J
10
100
= 25 °C
1
0.1
DS(on)
1.0
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
125
A
GS
*
= 25 °C
New Product
V
1.2
150
minimum V
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
0.020
0.016
0.012
0.008
0.004
0.000
10
250
200
150
100
DS(on)
50
0
0
0 .
0
0
is specified
1
I
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
1
100 ms
1 s
1 ms
10 ms
10 s
= 15 A
DC
2
V
100
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-80439-Rev. C, 03-Mar-08
Document Number: 74031
6
7
1
T
T
A
8
A
= 125 °C
= 25 °C
9
10
1
0

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