ld1010da ETC-unknow, ld1010da Datasheet

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ld1010da

Manufacturer Part Number
ld1010da
Description
High Performance N-channel Powerjfet With Diode
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LD1010DA
Manufacturer:
LOVOLTECH
Quantity:
20 000
Pin Definitions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(V
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
Pin Number
PWRLITE LD1010DA
High Performance N-Channel
Features
Applications
DPAK Lead-free Pin Assignments
DD
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
= 6V
1
2
3
DC
, IL=60A
Pin Name
Source
Drain
Gate
G
G
G
PK
Parameter
, L=0.3mH, R
Pin Function Description
Gate. Transistor Gate
Drain. Transistor Drain
Source. Transistor Source
S
S
S
G
=100 Ω)
D
D
D
P
OWERJFET
Symbol
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
T
V
V
V
E
V
P
I
I
T
STG
T
GD
D
D
AS
DS
GS
DS
24V
D
J
TM
(V)
N – Channel Power JFET
N – Channel Power JFET
N – Channel Power JFET
G
G
G
with PN Diode
with PN Diode
with PN Diode
with PN Diode
Product Summary
-55 to 150°C
-65 to 150°C
Rdson (Ω)
Ratings
0.0045
260°C
-12
-28
100
220
50
80
24
D
D
D
S
S
S
1
LD1010DA Rev 1.03 – 03-05
I
Units
D
50
mJ
°C
°C
°C
W
V
V
V
A
A
(A)
1

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ld1010da Summary of contents

Page 1

... Rdson (Ω) DS 24V Symbol -55 to 150° -65 to 150°C STG ( 0.0045 50 Ratings Units 24 V - 100 A 220 mJ °C °C °C 260° LD1010DA Rev 1.03 – 03-05 ...

Page 2

... Trr Reverse Recovery Time Notes: 1. Current is limited by bondwire; with an Rthjc = 1.56 2. Pulse width <= 500µs, duty cycle < Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010DA Conditions -50µA ...

Page 3

... VGS(V) VGS(V) Figure 5 – Gate Voltage V G Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010DA 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 1.0E-02 1.0E-02 1.0E-01 1.0E-01 0 – 10A Figure 2 – Gate Charge for V D Capacitance vs. Vds, Vgs=-5v; DPAK, 25'C 2000 1800 ...

Page 4

... rature ( rature (C) Figure 11 – Total Power Dissipation 4 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010DA Igs=10mA Igs=10mA 50 50 Igs=1µA Igs=1µ ...

Page 5

... This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. Notes LD1010DA LD1010DA LD1010DA XXXXX XXXXX XXXXX XXXX XXXX XXXX ...

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