2sa1190etz-e Renesas Electronics Corporation., 2sa1190etz-e Datasheet - Page 3

• Manufacturer Part Number: 2sa1190etz-e
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SA1190
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 6
–10.000
–1,000
–100
600
400
200
–10
–10
–8
–6
–4
–2
–1
0
0
Maximum Collector Dissipation Curve
Collector to Emitter Voltage V
0
Collector to Base Voltage V
Typical Output Characteristics (2)
Ambient Temperature Ta (°C)
Collector Cutoff Current vs.
I
Collector to Base Voltage
E
–20
–4
= 0
50
Ta = 75°C
–40
–8
–12
–25
–60
25
100
–16
–80
CB
– 2 µA
CE
I
B
= 0
(V)
150
(V)
–100
–20
–1,000
–100
–100
–1.0
–0.1
–1.0
–0.1
–20
–16
–12
–10
–10
–8
–4
0
Collector to Emitter Voltage V
Collector to Emitter Voltage V
0
0
Typical Output Characteristics (1)
Base to Emitter Voltage V
Typical Transfer Characteristics
V
Pulse
R
CE
Collector to Emitter Voltage
BE
Collector Cutoff Current vs.
–0.2
–20
–20
= –6 V
= ∞
Ta = 75°C
Ta = 75°C
–0.4
–40
–40
–25
25
25
–0.6
–60
–60
I
B
= 0
–80
–0.8
–25
–80
BE
CE
CE
(V)
–100
(V)
–100
(V)
–1.0