2sc5186-t1 Renesas Electronics Corporation., 2sc5186-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5186-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
70 to 140
FB
86
Symbol
h
C
S
S
FE
I
I
NF
NF
re
CBO
EBO
f
f
21e
21e
Note 2
Note 1
T
T
350 s, Duty Cycle
2
2
A
V
V
V
V
V
V
V
V
V
V
= +25 C)
Data Sheet PU10213EJ01V0DS
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
Test Conditions
C
E
C
C
C
C
C
C
C
E
= 0 mA
= 0 mA
= 20 mA
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 0 mA, f = 1 MHz
2%
MIN.
8.5
6.0
70
–
–
9
7
–
–
–
TYP.
7.5
1.3
1.3
0.4
11
10
–
–
–
9
MAX.
100
100
140
2.0
2.0
0.8
–
–
–
–
2SC5186
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
–