2sc6064 Sanyo Semiconductor Corporation, 2sc6064 Datasheet

2sc6064

Manufacturer Part Number

2sc6064

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC6064.pdf (4 pages)

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Ordering number : ENA0270

2SC6064

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

•

Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Adoption of MBIT process.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

NPN Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Symbol

V CBO

V CEO

V EBO

V CES

I CBO

I EBO

h FE 1

h FE 2

Tstg

Cob

I CP

P C

I C

f T

V CB =40V, I E =0A

V EB =4V, I C =0A

V CE =2V, I C =100mA

V CE =2V, I C =1.5A

V CE =10V, I C =300mA

V CB =10V, f=1MHz

2SC6064

Conditions

D2805EA MS IM TB-00001910

min

200

Ratings

typ

Ratings

420

--55 to +150

Continued on next page.

max

150

0.9

560

No. A0270-1/4

Unit

MHz

Related parts for 2sc6064

2sc6064 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC6064 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Symbol Conditions ...

Page 2

... Collector-to-Emitter Voltage 2SC6064 Symbol Conditions V CE (sat =1A =50mA V BE (sat =1A =50mA V (BR)CBO =0A V (BR)CEO I C =1mA (BR)EBO See specified Test Circuit. t stg See specified Test Circuit. ...

Page 3

... Collector Current (sat 1 0.01 0.1 Collector Current 2SC6064 = 100 1 0.01 IT10517 7 f=1MHz 0 0. 0.01 IT10519 = ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. 2SC6064 120 140 160 IT10525 PS No ...

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