2sc6113 Sanyo Semiconductor Corporation, 2sc6113 Datasheet - Page 2

• Manufacturer Part Number: 2sc6113
• Description: Npn Triple Diffused Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7504-001
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
5.45
10
9
8
7
6
5
4
3
2
1
0
0
1
5.45
16.0
2
1
Parameter
3
Collector-to-Emitter Voltage, V CE -- V
2
2.8
0.7
2.0
3.4
3
I C -- V CE
4
5.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
0.9
5
2.1
3.1
6
V (BR)CBO
V (BR)CEO
V CEX (sus)
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
I CBO
I EBO
h FE 1
h FE 2
Cob
t stg
t on
7
f T
t f
8
V CB =500V, I E =0A
V EB =5V, I C =0A
V CE =5V, I C =1.2A
V CE =5V, I C =6A
V CE =10V, I C =1.2A
V CB =10V, f=1MHz
I C =6A, I B =1.2A
I C =6A, I B =1.2A
I C =1mA, I E =0A
I C =5mA, R BE =∞
I E =1mA, I C =0A
I C =2.5A, I B1 =- -I B2 =2A, L=1mH, clamped
V CC =200V, 5I B1 =--2.5I B2 =I C =7A, R L =50Ω
V CC =200V, 5I B1 =--2.5I B2 =I C =7A, R L =50Ω
V CC =200V, 5I B1 =--2.5I B2 =I C =7A, R L =50Ω
IT13465
9
10
2SC6113
Conditions
Switching Time Test Circuit
14
12
10
8
6
4
2
0
0
INPUT
PW=20μs
D.C.≤1%
Base-to-Emitter Voltage, V BE -- V
0.5
50Ω
V BE = --5V
V R
min
1000
500
500
I C -- V BE
40
I B1
100μF
8
7
I B2
R B
1.0
+
Ratings
typ
18
80
470μF
V CC =200V
+
max
1.5
OUTPUT
1.0
1.5
0.5
3.0
0.3
R L
10
10
80
No. A1155-2/4
V CE =5V
IT13466
MHz
Unit
μA
μs
μs
μs
μA
pF
V
V
V
V
V
V
2.0