bc846bt Infineon Technologies Corporation, bc846bt Datasheet - Page 3

• Manufacturer Part Number: bc846bt
• Description: Npn Silicon Af Transistors
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
I
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
I
I
DC current gain 1)
I
I
I
Collector-emitter saturation voltage1)
I
I
Base-emitter saturation voltage 1)
I
I
Base-emitter voltage 1)
I
I
1) Pulse test: t ≤= 300 µ s, D = 2%
C
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
= 1 µA, I
= 1 µA, I
= 1 µA, I
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 2 mA, V
= 2 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 30 V, I
= 30 V, I
C
C
C
CE
CE
CE
CE
= 0
= 0
= 0
B
B
BE
BE
BE
E
E
CE
CE
CE
CE
B
B
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
= 5 V
= 5 V
= 5 V
= 5 V
= 5 mA
= 5 mA
= 0
= 0
= 0
= 5 V
= 5 V
= 5 V
= 5 V
A
BC846T
BC847T/850T
BC848T/849T
= 150 °C
BC846T
BC847T/BC850T
BC848T/BC849T
h
h
h
h
h
h
FE
FE
FE
FE
FE
FE
-group A
-group B
-group C
-group A
-group B
-group C
A
= 25°C, unless otherwise specified.
3
Symbol
V
V
I
I
h
h
V
V
V
CBO
CBO
FE
FE
(BR)CES
(BR)EBO
CEsat
BEsat
BE(ON)
min.
110
200
420
580
65
50
30
6
6
5
-
-
-
-
-
-
-
-
-
-
Values
BC846T...BC850T
typ.
140
250
480
180
290
520
200
700
900
660
90
-
-
-
-
-
-
-
-
-
max.
220
450
800
250
600
700
770
Aug-01-2002
15
5
-
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
µA
-
mV