2sc4691j Panasonic Corporation of North America, 2sc4691j Datasheet
2sc4691j
Manufacturer Part Number
2sc4691j
Description
For High-speed Switching
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4691J.pdf
(3 pages)
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Quantity
Price
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Part Number:
2sc4691j-TX
Manufacturer:
PANASONIC
Quantity:
237
Part Number:
2sc4691j-TX
Manufacturer:
PANASONIC/松下
Quantity:
20 000
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PANASONIC/松下
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Transistors
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
automatic insertion through the tape packing
2. * : Rank classification
Product of no-rank is not classified and have no indication for rank.
Rank
Parameter
Parameter
h
FE
60 to 120
*
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
CBO
I
T
EBO
a
CES
CP
I
I
stg
C
CE(sat)
BE(sat)
C
90 to 200
C
h
CBO
t
t
j
EBO
t
f
= 25°C
off
stg
on
FE
T
ob
R
CE(sat)
−55 to +125
Rating
V
V
V
I
I
V
V
Refer to the measurement circuit
C
C
100
300
125
125
CB
EB
CE
CB
CB
40
40
= 10 mA, I
= 10 mA, I
5
SJC00282BED
= 4 V, I
= 1 V, I
= 40 V, I
= 10 V, I
= 10 V, I
60 to 200
No-rank
C
C
Conditions
Unit
B
B
mW
E
E
E
mA
mA
= 0
= 10 mA
°C
°C
V
V
V
= 1 mA
= 1 mA
= 0
= −10 mA, f = 200 MHz
= 0, f = 1 MHz
Marking Symbol: 2Y
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
3
1
Min
60
+0.05
–0.03
±0.05
2
0.17
Typ
450
17
17
10
2
SSMini3-F1 Package
Max
0.25
200
0.1
0.1
1.0
0.12
6
EIAJ: SC-89
+0.03
–0.01
1: Base
2: Emitter
3: Collector
Unit: mm
MHz
Unit
µA
µA
pF
ns
ns
ns
V
V
1
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2sc4691j Summary of contents
Page 1
... Transistors 2SC4691J Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage V • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... Measurement circuit test circuit 0.1 µF on off V OUT 220 Ω 50 Ω 3.3 kΩ 3.3 kΩ Ω = − 10 10% 90% V 90% OUT off 150 125 100 100 125 150 ( ° ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...