zxmn3a02n8 Zetex Semiconductors plc., zxmn3a02n8 Datasheet - Page 4

• Manufacturer Part Number: zxmn3a02n8
• Description: 30v N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A02N8
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
PARAMETER
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
V SD
t rr
Q rr
SYMBOL
amb
= 25°C unless otherwise stated).
4
MIN.
1.0
30
1400
TYP.
35.0
14.5
26.8
0.85
209
120
3.9
5.5
7.6
4.7
4.7
8.3
22
17
MAX. UNIT
0.025
0.035
0.95
100
1
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 4 - JANUARY 2005
I D =250µA, V GS =0V
V DS =30V, V GS =0V
I
V GS =10V, I D =12A
V GS =4.5V, I D =10.2A
V DS =10V,I D =12A
V DS =25V, V GS =0V,
f=1MHz
V DD =10V, I D =1A
R G ≅6.0Ω, V GS =4.5V
(refer to test circuit)
V DS =15V,V GS =5V,
I D =5.5A
(refer to test circuit)
V DS =15V,V GS =10V,
I D =5.5A
(refer to test circuit)
T J =25°C, I S =9A,
V GS =0V
T J =25°C, I F =5.5A,
di/dt= 100A/µs
V GS = 20V, V DS =0V
D
=250 A, V DS = V GS
CONDITIONS.