zxmn3f30fh Zetex Semiconductors plc., zxmn3f30fh Datasheet - Page 4

• Manufacturer Part Number: zxmn3f30fh
• Description: 30v Sot23 N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Static
Drain-Source breakdown
Voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gatecharge
Gate-Source charge
Gate-Drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(†)
(†) (‡)
(*)(†)
(*)
(*)
(†)
(†)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
amb
Min.
= 25°C unless otherwise stated)
1.0
30
4
Typ.
0.73
318
5.2
1.6
2.6
9.3
7.7
1.8
4.8
75
45
17
12
1
0.047
0.065
Max.
100
0.5
3.0
1.2
Unit
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ZXMN3F30FH
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
I
T
di/dt=100A/ s
D
D
D
D
S
j
DS
GS
GS
GS
DS
DS
DD
G
DS
= 1.25A, V
= 250μA, V
= 250μA, V
= 1A
= 2.5A
=25
≈ 6.0Ω
= 30V, V
= 15V, I
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, V
o
C, I
www.zetex.com
F
=1.6A
D
D
D
GS
GS
GS
GS
GS
= 2.5A
= 3.2A
GS
DS
DS
= 2.8A
=0V
=0V
= 10V
= 10V
=0V
=0V
=V
=0V
GS