zxmn2f34ma Zetex Semiconductors plc., zxmn2f34ma Datasheet - Page 4

• Manufacturer Part Number: zxmn2f34ma
• Description: 20v Dfn2x2 N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 3 - May 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Static
Drain-Source breakdown
voltage
Zero gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-Source charge
Gate Drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(†)
(‡)(†)
(*)(†)
(*)
(*)
(†)
(†)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
amb
Min.
= 25°C unless otherwise stated)
0.5
20
4
Typ.
2.65
0.61
0.63
0.73
277
0.8
7.5
4.2
9.9
5.1
2.8
6.5
1.4
65
35
0.060
0.120
Max.
100
1.5
1.2
1
Unit
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ZXMN2F34MA
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
I
T
di/dt=100A/ s
D
D
D
D
S
j
DS
GS
GS
GS
DS
DS
DD
G
DS
= 1.25A, V
= 250μA, V
= 250μA, V
= 1A
= 2.5A
=25
≈ 6.0Ω
= 20V, V
= 10V, I
= 10V, V
= 10V, V
=±12V, V
= 4.5V, I
= 2.5V, I
= 10V, V
o
C, I
www.zetex.com
F
=1.65A
D
D
D
GS
GS
GS
GS
GS
= 2.5A
GS
DS
DS
= 2.5A
= 1.0A
=0V
=0V
= 4.5V
= 4.5V
=0V
=0V
=V
=0V
GS