si7868dp-t1-e3 Vishay, si7868dp-t1-e3 Datasheet - Page 3

• Manufacturer Part Number: si7868dp-t1-e3
• Description: N-channel20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71849
S-41576—Rev. D, 23-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0030
0.0025
0.0020
0.0015
0.0010
0.0005
0.0000
6.0
4.8
3.6
2.4
1.2
0.0
60
10
1
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
T
10
= 29 A
0.2
On-Resistance vs. Drain Current
J
V
14
= 10 V
SD
= 150_C
Q
-- Source-to-Drain Voltage (V)
g
I
D
0.4
20
-- Total Gate Charge (nC)
-- Drain Current (A)
Gate Charge
28
30
0.6
42
T
J
40
0.8
= 25_C
V
V
GS
GS
= 4.5 V
56
= 10 V
1.0
50
1.2
60
70
10000
0.010
0.008
0.006
0.004
0.002
0.000
8000
6000
4000
2000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
--50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
--25
V
I
D
GS
= 29 A
V
2
4
= 10 V
DS
V
T
GS
J
0
-- Junction Temperature (_C)
-- Drain-to-Source Voltage (V)
-- Gate-to-Source Voltage (V)
Capacitance
25
4
8
Vishay Siliconix
I
D
C
= 29 A
C
50
iss
oss
6
12
75
Si7868DP
100
www.vishay.com
8
16
125
10
150
20
3