si7846dp-t1 Vishay, si7846dp-t1 Datasheet

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si7846dp-t1

Manufacturer Part Number
si7846dp-t1
Description
N-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71442
S-60468-Rev. D, 27-Mar-06
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Ordering Information:
DS
150
(V)
8
6.15 mm
D
7
D
6
0.050 at V
D
PowerPAK SO-8
Bottom View
5
Si7846DP-T1
Si7846DP-T1—E3 (Lead (Pb)-free)
r
D
DS(on)
J
a
Parameter
Parameter
= 150 °C)
GS
a
1
(Ω)
S
= 10 V
N-Channel 150-V (D-S) MOSFET
2
S
a
3
S
5.15 mm
4
G
a
b,c
A
I
D
6.7
= 25 °C, unless otherwise noted
Steady State
Steady State
(A)
T
T
L = 0.1 mH
T
T
T
T
t ≤ 10 sec
C
C
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized for Fast Switching
• 100 % R
• Primary Side Switch for High Density DC/DC
• Telecom/Server 48-V DC/DC
• Industrial and 42-V Automotive
Symbol
Symbol
G
T
R
R
N-Channel MOSFET
J
Package with Low 1.07-mm Profile
V
V
I
I
P
, T
I
DM
thJA
thJC
AS
I
DS
GS
D
S
D
stg
D
S
g
Tested
®
10 secs
Power MOSFETS
Typical
6.7
5.4
4.3
5.2
3.3
1.5
19
52
– 55 to 150
± 20
24.5
19.5
150
260
50
25
Steady State
Maximum
4.0
3.3
1.6
1.9
1.2
1.8
24
65
Vishay Siliconix
Si7846DP
www.vishay.com
®
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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si7846dp-t1 Summary of contents

Page 1

... Bottom View Ordering Information: Si7846DP-T1 Si7846DP-T1—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7846DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71442 S-60468-Rev. D, 27-Mar-06 3000 2500 2000 1500 1000 0.15 0.12 0.09 0. °C J 0.03 0.00 0.8 1.0 1.2 Si7846DP Vishay Siliconix C iss C 500 rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 2.0 1.5 1.0 0.5 0 ...

Page 4

... Si7846DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1.0 0.5 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μ 100 125 150 100 0.1 0.001 0.01 Time (sec) Single Pulse Power, Junction-to-Ambient - ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71442. Document Number: 71442 S-60468-Rev. D, 27-Mar-06 0. Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7846DP Vishay Siliconix - www.vishay.com ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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