si7884bdp Vishay, si7884bdp Datasheet - Page 4

• Manufacturer Part Number: si7884bdp
• Description: Vishay Siliconix
• Manufacturer: Vishay

Si7884BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.6
0.3
0.0
0.1
10
- 50
1
0.0
I
D
- 25
= 5 mA
Source-Drain Diode Forward Voltage
0.2
I
D
V
SD
= 250 µA
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
T
100
0.1
J
10
100
1
= 25 °C
0.1
1.0
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
125
Single Pulse
T
GS
A
= 25 °C
New Product
> minimum V
150
V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS
Limited
0.03
0.02
0.01
0.00
10
DS(on)
50
40
30
20
10
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1
10 s
100 s, DC
100 µs
1 ms
10 ms
100 ms
1 s
0.1
2
V
100
GS
3
- Gate-to-Source Voltage (V)
1
Time (s)
4
5
S-82113-Rev. B, 08-Sep-08
Document Number: 68395
10
6
7
T
T
I
100
J
D
T
J
8
A
= 125 °C
= 16 A
= 25 °C
= 25 °C
9
1000
10