si7898dp-t1 Vishay, si7898dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7898dp-t1
• Description: N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71873
S-52555-Rev. C, 19-Dec-05
0.15
0.12
0.09
0.06
0.03
0.00
50
10
20
16
12
1
8
4
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 3.5 A
0.2
On-Resistance vs. Drain Current
= 75 V
V
5
6
SD
Q
g
- Source-to-Drain Voltage (V)
T
0.4
V
I
D
J
- Total Gate Charge (nC)
GS
Gate Charge
= 150 °C
- Drain Current (A)
10
12
= 6 V
0.6
15
18
0.8
V
T
GS
J
20
24
= 25 °C
1.0
= 10 V
1.2
25
30
1200
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 3.5 A
C
= 10 V
rss
30
2
T
V
V
0
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
60
4
C
50
C
Vishay Siliconix
oss
iss
90
I
D
6
75
= 3.5 A
Si7898DP
www.vishay.com
100
120
8
125
150
150
10
3