zxmc4559dn8 Zetex Semiconductors plc., zxmc4559dn8 Datasheet

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zxmc4559dn8

Manufacturer Part Number
zxmc4559dn8
Description
Complementary 60v Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
zxmc4559dn8TA
Manufacturer:
DIODES/美台
Quantity:
20 000
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 5 - MAY 2005
DEVICE
ZXMC4559DN8TA
ZXMC4559DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
ZXMC
4559
(BR)DSS
(BR)DSS
= -60V; R
= 60V; R
REEL
13’‘
7
’‘
WIDTH
12mm
12mm
TAPE
DS(ON)
DS(ON)
= 0.055 ; I
= 0.105 ; I
QUANTITY
2500 units
PER REEL
500 units
D
D
= 4.7A
1
= -3.9A
Q1 = N-CHANNEL
ZXMC4559DN8
PINOUT
S E M I C O N D U C T O R S
Q2 = P-CHANNEL
Top view
SO8

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zxmc4559dn8 Summary of contents

Page 1

... WIDTH ZXMC4559DN8TA 7 12mm ’‘ ZXMC4559DN8TC 13’‘ 12mm DEVICE MARKING • ZXMC 4559 ISSUE 5 - MAY 2005 = 0.055 ; 0.105 ; I = -3. N-CHANNEL QUANTITY PER REEL 500 units 2500 units 1 ZXMC4559DN8 SO8 Q2 = P-CHANNEL PINOUT Top view ...

Page 2

... ZXMC4559DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)(c) (a) (d) Power Dissipation at TA=25°C Linear Derating Factor (a) (e) Power Dissipation at TA=25°C ...

Page 3

... ISSUE 5 - MAY 2005 ZXMC4559DN8 CHARACTERISTICS ...

Page 4

... ZXMC4559DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time Rise Time ...

Page 5

... Reverse Recovery Charge NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - MAY 2005 ZXMC4559DN8 = 25°C unless otherwise stated) amb SYMBOL MIN. TYP. MAX. V -60 ...

Page 6

... ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25°C 0.1 0. Gate-Source Voltage (V) GS Typical Transfer Characteristics 2.5V 1000 V GS 100 0.1 0.01 0.01 0 Drain Current (A) D On-Resistance v Drain Current 150° ...

Page 7

... OSS 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 5 - MAY 2005 4. 1MHz RSS Gate-Source Voltage v Gate Charge 7 ZXMC4559DN8 V = 30V Charge (nC ...

Page 8

... ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 8 ...

Page 9

... P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 ZXMC4559DN8 ...

Page 10

... ZXMC4559DN8 PACKAGE OUTLINE D Pin 1 Seating Plane e b CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany USA Telefon: (49 Telephone: (1) 631 360 2222 ...

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