si7336dp-t1 Vishay, si7336dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7336dp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7336DP
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
GS
2
V
= 10 thru 4 V
a
a
DS
Output Characteristics
ï Drain-to-Source Voltage (V)
a
4
a
a
6
Symbol
3 V
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
oss
t
SD
rss
t
iss
rr
fs
gs
gd
r
f
g
g
8
10
V
V
V
I
DS
DS
D
DS
DS
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
= 15 V, V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
V
I
DS
DS
Test Condition
S
DS
GS
GS
DD
DD
DS
= 2.9 A, V
= 0 V, V
= V
w 5 V, V
= 30 V, V
= 10 V, I
,
= 15 V, R
= 15 V, R
= 4.5 V, I
= 15 V, I
,
GEN
GS
GS
GS
GS
GS
GS
, I
= 10 V, R
GS
= 4.5 V, I
= 0 V, T
= 0 V, f = 1 MHz
D
GS
GS
D
GS
D
L
L
= 250 mA
D
= "20 V
= 25 A
= 15 W
= 15 W
= 19 A
= 25 A
= 10 V
= 0 V
= 0 V
,
,
J
D
D
g
g
= 55_C
60
50
40
30
20
10
= 6 W
= 20 A
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
ï Gate-to-Source Voltage (V)
Min
1.0
0.8
30
1.5
2.0
0.0026
0.0033
T
Typ
5600
0.72
860
415
C
110
1.3
36
18
10
24
16
90
32
45
S-41795—Rev. C, 04-Oct-04
25_C
= 125_C
Document Number: 72415
2.5
0.00325
0.0042
Max
"100
140
3.0
1.1
2.0
50
35
25
50
70
3.0
1
5
3.5
ï55_C
Unit
nC
nA
mA
mA
pF
p
ns
ns
W
W
W
V
A
S
V
4.0