si7336adp-t1 Vishay, si7336adp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7336adp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73152
S-41958—Rev. A, 25-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
0.004
0.003
0.002
0.001
0.000
0.1
6
5
4
3
2
1
0
50
10
1
0
0
0.00
V
I
5
D
DS
Source-Drain Diode Forward Voltage
= 20 A
On-Resistance vs. Drain Current
0.2
10
= 15 V
V
10
Q
SD
T
g
J
= 150_C
ï Total Gate Charge (nC)
ï Source-to-Drain Voltage (V)
I
D
15
V
0.4
GS
ï Drain Current (A)
Gate Charge
20
= 4.5 V
20
0.6
25
30
30
0.8
V
GS
35
T
40
J
= 10 V
= 25_C
1.0
40
New Product
50
45
1.2
0.015
0.012
0.009
0.006
0.003
0.000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
ï50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
ï25
V
I
rss
D
GS
= 25 A
V
2
V
GS
= 10 V
6
DS
T
J
0
ï Gate-to-Source Voltage (V)
ï Junction Temperature (_C)
ï Drain-to-Source Voltage (V)
25
Capacitance
C
4
12
oss
I
D
Vishay Siliconix
C
= 25 A
50
iss
Si7336ADP
6
18
75
100
www.vishay.com
8
24
125
10
150
30
3