zxmp6a16k Zetex Semiconductors plc., zxmp6a16k Datasheet - Page 4

• Manufacturer Part Number: zxmp6a16k
• Description: 60v Dpak P-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Static
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*) (‡)
Symbol
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
Min.
-1.0
-60
4
1021
-0.85
Typ.
12.1
24.2
29.2
39.6
7.2
3.5
4.1
2.5
3.7
83
56
35
10
2%.
0.085
0.125
Max.
-0.95
-1.0
100
Unit Conditions
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMP6A16K
T
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=25°C, I
=25°C, I
= -250 A, V
= -250 A, V
= -2.9A
= -2.9A
≅6.0 , V
= -60V, V
= -15V, I
= -30V, V
= -30V, V
= -30V, V
=±20V, V
= -10V, I
= -4.5V, I
= -30V, I
=0V
www.zetex.com
S
S
= -3.4A,
= -2A,
GS
D
D
D
D
GS
GS
GS
GS
DS
= -2.9A
= -2.9A
= -1A
= -10V
GS
DS
= -2.4A
=0V
=0V
=0V
= -5V
= -10V
=VGS
=0V