bsc047n08ns3g Infineon Technologies Corporation, bsc047n08ns3g Datasheet - Page 6

• Manufacturer Part Number: bsc047n08ns3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.4
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
10
DS
=f(T
8
6
4
2
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=50 A; V
20
20
max
GS
=10 V
V
T
DS
j
60
40
[°C]
typ
[V]
100
60
140
Ciss
Crss
Coss
180
page 6
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
10
=f(T
SD
1
4
3
2
1
0
0.0
-60
)
j
); V
j
GS
-20
=V
0.5
DS
20
90 µA
150 °C
V
T
SD
j
25°C, max
1.0
60
[°C]
[V]
25 °C
BSC047N08NS3 G
900 µA
100
150°C, max
1.5
140
2008-10-16
180
2.0