tp2535 Supertex, Inc., tp2535 Datasheet

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tp2535

Manufacturer Part Number
tp2535
Description
P-channel Enhancement Mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP2535
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
tp2535A
Quantity:
91
Part Number:
tp2535AG
Manufacturer:
SUPERTEX
Quantity:
20 000
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TP2535
Device
Package Option
TP2535N3-G
TO-92
P-Channel Enhancement Mode
Vertical DMOS FETs
-55°C to +150°C
+300°C
Value
BV
BV
BV
±20V
DGS
DSS
DSS
-350
(V)
/BV
DGS
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
Product Marking
Y Y W W
R
(max)
DS(ON)
(Ω)
25
2535
TP
YY = Year Sealed
WW = Week Sealed
DRAIN
TO-92 (N3)
TO-92 (N3)
V
(max)
= “Green” Packaging
-2.4
GS(th)
(V)
SOURCE
GATE
TP2535
I
(min)
-0.4
D(ON)
(A)

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tp2535 Summary of contents

Page 1

... BV /BV DSS DGS (V) TO-92 -350 Pin Confi guration Value BV DSS BV DGS Product Marking ±20V -55°C to +150°C +300°C TP2535 R V DS(ON) GS(th) (max) (max) (Ω) (V) 25 -2.4 SOURCE DRAIN GATE TO-92 (N3 Year Sealed 2535 WW = Week Sealed “ ...

Page 2

... V = -25V -0.4A 25Ω GEN PULSE GENERATOR R GEN INPUT TP2535 † DRM (A) -0.6 = -2.0mA = -1.0mA D = -1.0mA Max Rating DS = 125° -25V DS = -25V DS = -100mA D = -100mA D = -100mA D = -100mA D = -100mA = -100mA D.U.T. Output ...

Page 3

... Typical Performance Curves ° ° ° ° 3 TP2535 ° ° ...

Page 4

... On-Resistance vs. Drain Current 100 -4. -10V -0.4 -0.8 -1.2 -1.6 I (amperes and R Variation with Temperature (th -10V, -0.1A DS(ON) 1.1 1.0 0 -1mA (th) 0.8 - 100 ° Gate Drive Dynamic Characteristics - 10V - 40V DS -4 190 pF -2 60pF 0 0 0.4 0.8 1.2 1.6 Q (nanocoulombs) G TP2535 -2.0 2.5 2.0 1.5 1.0 0.5 0 150 2.0 ...

Page 5

... TO-92 Package Outline (N3) Seating Plane Front View E1 1 Bottom View Symbol A MIN .170 Dimension NOM - (inches) MAX .210 Drawings not to scale. Doc.# DSFP-TP2535 A112807 Side View .014 .014 .175 - - - .022 .022 .205 ...

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