vp2206 Supertex, Inc., vp2206 Datasheet
vp2206
Manufacturer Part Number
vp2206
Description
P-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
1.VP2206.pdf
(4 pages)
Ordering Information
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
†
Distance of 1.6 mm from case for 10 seconds.
MIL visual screening available
displays, bipolar transistors, etc.)
BV
BV
-60V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
0.9Ω
DS(ON)
(min)
I
D(ON)
-4A
P-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
BV
300°C
± 20V
VP2206N2
Order Number / Package
DGS
DSS
TO-39
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VP2206N3
TO-92
Case: DRAIN
TO-39
D G S
TO-92
S G D
VP2206
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vp2206 Summary of contents
Page 1
... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VP2206 TO- TO-92 TO-39 Case: DRAIN ...
Page 2
... GS D Ω 0 -10V -3. 1.2 %/° -10V -3. -25V - 450 -25V 180 MHz -25V - 10Ω GEN - PULSE GENERATOR R gen INPUT V DD VP2206 I DRM -8.0A -4. D.U.T. OUTPUT R L ...
Page 3
... Saturation Characteristics - -10V -8 - -6V -2 -4V - (volts) DS Power Dissipation vs. Case Temperature 10 8 TO- TO- 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 TO- 25°C C 0.4 TO- 1. 25° 0.001 0.01 0 (seconds) p VP2206 -10 150 10 ...
Page 4
... Variation with Temperature (th -10V, -3.5A DS(ON -1mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V -40V DS -6 725 310 (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VP2206 -10 2.0 1.6 1.2 0.8 0.4 0 150 10 11/12/01 ...