si7478dp Vishay, si7478dp Datasheet - Page 2

no-image

si7478dp

Manufacturer Part Number
si7478dp
Description
N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7478DP
Quantity:
5 510
Part Number:
SI7478DP
Manufacturer:
A
Quantity:
5 510
Part Number:
si7478dp-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
79 703
Part Number:
si7478dp-T1-E3
Manufacturer:
TI
Quantity:
176
Part Number:
si7478dp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7478dp-T1-E3
Quantity:
3 000
Part Number:
si7478dp-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
33 113
Part Number:
si7478dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7478dp-T1-GE3
Quantity:
70 000
Si7478DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
60
50
40
30
20
10
0
0.0
0.5
V
a
a
DS
V
GS
Output Characteristics
- Drain-to-Source Voltage (V)
a
= 10 thru 4 V
1.0
J
= 25 °C, unless otherwise noted
a
1.5
Symbol
V
r
I
DS(on)
t
t
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
2.0
g
Q
R
t
SD
t
t
rr
gd
fs
gs
r
f
g
g
3 V
2.5
V
V
I
New Product
D
DS
DS
3.0
≅ 1 A, V
I
F
V
= 60 V, V
= 30 V, V
V
V
V
V
V
= 4.5 A, di/dt = 100 A/µs
DS
V
V
GS
I
DS
S
DD
DS
DS
GS
DS
Test Conditions
= 4.5 A, V
= 0 V, V
= V
= 4.5 V, I
= 60 V, V
≥ 5 V, V
= 30 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 0 V, T
= 10 V, I
GS
D
GS
D
GS
D
D
= 250 µA
GS
L
= 18.5 A
= ± 20 V
= 20 A
= 20 A
= 10 V
= 30 Ω
= 0 V
= 0 V
J
D
G
= 55 °C
= 20 A
= 6 Ω
60
50
40
30
20
10
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
Min
1.0
0.5
40
- Gate-to-Source Voltage (V)
1.5
T
0.006
0.007
C
0.76
Typ
105
115
1.0
2.0
63
22
19
25
20
45
41
25 °C
= 125 °C
S-71596-Rev. C, 30-Jul-07
Document Number: 72913
2.5
0.0075
0.0088
± 100
Max
160
175
3.0
1.2
1.5
40
30
70
70
1
5
3.0
3.5
- 55 °C
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
4.0

Related parts for si7478dp