si7905dn Vishay, si7905dn Datasheet

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si7905dn

Manufacturer Part Number
si7905dn
Description
Dual P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. T
Document Number: 69920
S-80259-Rev. A, 04-Feb-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free)
C
DS
- 40
= 25 °C.
(V)
8
D1
3.30 mm
7
D1
0.060 at V
0.089 at V
6
PowerPAK 1212-8
D2
http://www.vishay.com/ppg?73257
r
DS(on)
5
D2
GS
GS
J
(Ω)
= - 10 V
= - 4.5V
= 150 °C)
1
Dual P-Channel 40-V (D-S) MOSFET
S1
2
G1
Bottom View
3
S2
I
3.30 mm
D
- 6
4
- 5
(A)
G2
e
f
c, d
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
g
11 nC
(Typ.)
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Load Switch
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
G
stg
and UIS Tested
1
®
P-Channel MOSFET
Power MOSFET
S
D
1
1
- 50 to 150
2.5
1.6
- 5
- 4
- 2
11.25
Limit
± 20
20.8
13.3
- 40
- 20
- 15
- 6
- 6
260
- 5
a, b
a, b
a, b
a, b
a, b
e
e
G
Vishay Siliconix
2
P-Channel MOSFET
®
Si7905DN
www.vishay.com
S
D
2
2
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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si7905dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7905DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... 0.0 2.4 3.0 0 1500 1200 900 600 300 1.8 1.5 1 0.9 0 Si7905DN Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS ...

Page 4

... Si7905DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage 0.01 www.vishay.com 4 New Product 0.20 0. °C J 0.10 0.05 0.00 0.9 1 250 µ 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69920 S-80259-Rev. A, 04-Feb-08 New Product Package Limited 100 T - Case Temperature (°C) C Current Derating* 1.6 1.2 0.8 0.4 0.0 100 125 150 0 Si7905DN Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7905DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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