si7949dp Vishay, si7949dp Datasheet - Page 3

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si7949dp

Manufacturer Part Number
si7949dp
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Document Number: 73130
S-42077—Rev. A, 15-Nov-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
40
10
8
4
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 5 A
0.2
On-Resistance vs. Drain Current
5
10
= 30 V
V
V
GS
SD
Q
g
= 4.5 V
I
− Source-to-Drain Voltage (V)
10
D
− Total Gate Charge (nC)
0.4
− Drain Current (A)
T
Gate Charge
20
J
= 150_C
15
0.6
30
20
0.8
V
GS
= 10 V
T
40
J
= 25_C
25
1.0
50
30
1.2
New Product
1800
1500
1200
0.30
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
−50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
rss
On-Resistance vs. Junction Temperature
−25
V
I
D
GS
10
= 5 A
V
V
2
= 10 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
C
20
oss
25
Capacitance
4
C
iss
Vishay Siliconix
I
30
50
D
= 5 A
6
75
Si7949DP
40
100
www.vishay.com
8
50
125
150
10
60
3

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