ssm6j214fe TOSHIBA Semiconductor CORPORATION, ssm6j214fe Datasheet - Page 4

• Manufacturer Part Number: ssm6j214fe
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
10000
3000
1000
1000
300
100
-1.0
-0.8
-0.6
-0.4
-0.2
100
30
10
10
−50
-0.1
-0.001
0
1
Common Source
Ta = 25 °C
f = 1 MHz
V GS = 0 V
t on
t r
t f
t off
Drain–source voltage V
Ambient temperature Ta (°C)
-0.01
0
Drain current I
-1
C – V
V
t – I
th
-0.1
50
– Ta
DS
D
-10
D
Common Source
V DD = -15 V
V GS = 0 to -4.5 V
Ta = 25 °C
R G = 10Ω
DS
Common Source
V DS = -3 V
I D = -1 mA
100
(A)
-1
(V)
C iss
C oss
C rss
-100
150
-10
4
0.001
100
0.01
3.0
1.0
0.3
0.1
-12
-10
30
10
0.1
-8
-6
-4
-2
10
-0.01
0
1
0
0
Common Source
V DS = -3 V
Ta = 25 °C
Pulse test
Common Source
V GS = 0 V
Pulse test
G
Drain–source voltage V
0.2
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
100 °C
V DD = -15 V
Drain current I
S
-0.1
D
10
I
DR
0.4
|Y
I
DR
fs
| – I
– V
0.6
V DD = -24 V
D
DS
D
SSM6J214FE
−25 °C
-1
20
(A)
0.8
Common Source
I D = -3.6 A
Ta = 25 °C
25 °C
DS
2011-01-25
(V)
1.0
-10
30
1.2