ssm6p41fe TOSHIBA Semiconductor CORPORATION, ssm6p41fe Datasheet - Page 4

• Manufacturer Part Number: ssm6p41fe
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 Common)
10000
1000
1000
100
500
300
100
10
50
30
10
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.72 A
Ta = 25°C
Drain-Source voltage V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
-10
VDD = - 10 V
Drain current I
-1
1
C – V
|Y
fs
-100
| – I
DS
VDD = - 16 V
D
D
-10
(mA)
DS
-1000
2
(V)
C oss
C rss
C iss
-10000
-100
3
4
*:Total Rating
10000
10000
1000
1000
100
100
0.1
10
10
1
250
200
150
100
150
1
0
-1
0
-40
t on
G
t r
Common Source
V GS = 0 V
t off
t f
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm
-20
0.2
S
D
Drain-source voltage V
Ambient temperature Ta (°C)
Ta =100 °C
-10
0
I
DR
Drain current I
0.4
20
I
DR
P
40
t – I
D
-100
– V
* – T
0.6
D
60
DS
−25 °C
a
D
80
0.8
DS
(mA)
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM6P41FE
-1000
100
(V)
120
1.0
2009-06-25
2
140
× 6)
-10000
1.2
160