ssm3k15act TOSHIBA Semiconductor CORPORATION, ssm3k15act Datasheet

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ssm3k15act

Manufacturer Part Number
ssm3k15act
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SSM3K15ACT
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Load Switching Applications
Absolute Maximum Ratings
Marking (Top View)
2.5 V drive
Low ON-resistance: R
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board
Polarity mark
DI
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
R
DS(ON)
DS(ON)
DC
Pulse
= 3.6 Ω (max) (@V
= 6.0 Ω (max) (@V
SSM3K15ACT
Pin Condition (Top View)
Polarity mark (on the top)
(Ta = 25°C)
1. Gate
2. Source
3. Drain
*
2
1
Electrodes: On the bottom
Symbol
P
V
V
D
T
I
T
GSS
DSS
I
DP
(Note 1)
stg
D
ch
GS
GS
3
−55 to 150
= 4 V)
= 2.5 V)
Rating
2
± 20
100
400
100
150
30
)
1
Unit
mW
mA
°C
°C
V
V
Equivalent Circuit
1
Weight: 0.75 mg (typ.)
CST3
JEDEC
JEITA
TOSHIBA
3
SSM3K15ACT
2
2-1J1B
2010-11-29
Unit: mm

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ssm3k15act Summary of contents

Page 1

... DP P (Note 1) 100 mW D °C T 150 ch −55 to 150 °C T stg 2 ) Pin Condition (Top View) Polarity mark (on the top Gate 2. Source 3. Drain * Electrodes: On the bottom 1 SSM3K15ACT Unit: mm CST3 JEDEC ― JEITA ― TOSHIBA 2-1J1B Weight: 0.75 mg (typ.) Equivalent Circuit 2010-11-29 ...

Page 2

... OUT Common source Ta = 25°C requires higher voltage than V GS (on) < V < (off (on) vary depending on board material, board area, board thickness D 2 SSM3K15ACT Min Typ. ⎯ 30 ⎯ 16 ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 ⎯ (Note 2) 35 ⎯ (Note 2) 2.3 ⎯ ...

Page 3

... Gate-source voltage 4 400 Gate-source voltage V 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K15ACT I – − 25 °C Common source Pulse test 1.0 2.0 3.0 4.0 ( – (ON Common source Pulse test 25 ° 100 °C − ...

Page 4

... Ta =100 °C 1 0.1 1000 0 Drain-source voltage V 1000 t off 100 100 1 ( 140 160 4 SSM3K15ACT I – Common source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common source ° ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K15ACT 2010-11-29 ...

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