ssm3k15afu TOSHIBA Semiconductor CORPORATION, ssm3k15afu Datasheet

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ssm3k15afu

Manufacturer Part Number
ssm3k15afu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Quantity
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Part Number:
SSM3K15AFU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ssm3k15afu,LF
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Load Switching Applications
Absolute Maximum Ratings
Marking
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
2.5 V drive
Low ON-resistance: R
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board(25.4 mm × 25.4 mm × 1.6mm , Cu Pad : 0.6mm
1
DI
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
3
Characteristics
2
0.6 mm
R
DS(ON)
DS(ON)
DC
Pulse
1.0 mm
= 3.6 Ω (max) (@V
= 6.0 Ω (max) (@V
Equivalent Circuit
SSM3K15AFU
(Ta = 25°C)
Symbol
P
V
V
D
T
I
T
GSS
DSS
I
DP
(Note 1)
stg
D
ch
GS
GS
−55 to 150
= 4 V)
= 2.5 V)
Rating
± 20
100
400
150
150
30
1
1
(top view)
3
Unit
mW
mA
°C
°C
V
V
2
2
Weight: 6.0 mg (typ.)
× 3)
JEDEC
JEITA
TOSHIBA
USM
SSM3K15AFU
1. Gate
2. Source
3. Drain
2-2E1E
2010-12-07
SC-70
Unit: mm

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ssm3k15afu Summary of contents

Page 1

... Unit V 30 DSS ± GSS I 100 400 DP P (Note 1) 150 mW D °C T 150 ch −55 to 150 °C T stg Equivalent Circuit (top view SSM3K15AFU Gate 2. Source USM 3. Drain JEDEC JEITA SC-70 TOSHIBA 2-2E1E Weight: 6.0 mg (typ.) 2 × 2010-12-07 Unit: mm ― ...

Page 2

... OUT Common source Ta = 25°C requires higher voltage than V GS (on) < V < (off (on) vary depending on board material, board area, board thickness D 2 SSM3K15AFU Min Typ. ⎯ 30 ⎯ 16 ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 ⎯ (Note 2) 35 ⎯ (Note 2) 2.3 ⎯ ...

Page 3

... Gate-source voltage 4 400 Gate-source voltage V 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K15AFU I – − 25 °C Common source Pulse test 1.0 2.0 3.0 4.0 ( – (ON Common source Pulse test 25 ° 100 °C − ...

Page 4

... Drain-source voltage V 1000 t off 100 iss oss C rss 100 1 (V) 2 × 3) 140 160 4 SSM3K15AFU I – Common source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common source ° ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K15AFU 2010-12-07 ...

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